isc Silicon
PNP Power
Transistor
2SA1758
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min) ·DC Current Gain-
: hFE= 60(Min)@ (VCE= -2V, IC= -2A) ·Low Saturation Voltage-
: VCE(sat)= -0.
3V(Max)@ (IC= -6A, IB= -0.
3A) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
-12
A
30
W
150
℃
Tstg
Storage...