isc Silicon
PNP Power
Transistor
DESCRIPTION ·Low Collector Saturation Voltage
:VCE(sat)= -0.
5(V)(Max)@IC= -2A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-100
V
VCEO Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-5
A
IB
Base Collector Current-Continuous
-0.
5
A
PC
Total Power Dissipation @ TC=25℃
20
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SA1718
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