net
Transistors
2SD0638 (2SD638)
Silicon
NPN epitaxial planar type
For medium-power general amplification Complementary to 2SB0643 (2SB643)
(0.
4)
(1.
5) (1.
5)
Unit: mm
6.
9±0.
1 2.
5±0.
1 (1.
0)
2.
0±0.
2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature
*
1.
0±0.
1
(0.
85)
2.
4±0.
2
0.
45±0.
05
VCBO VCEO VEBO IC ICP PC Tj Tstg
30 25 7 0.
5 1 600 150 −55 to +150
V V V A A mW °C °C
3 (2.
5) 2 (2.
5) 1
1.
25±0.
05
Symbol
Rating
Unit
0.
55±0.
1
1: Base 2: Collector ...