Power
Transistors
2SB1605, 2SB1605A
Silicon
PNP epitaxial planar type
For low-freauency power amplification
s Features
q q q
Unit: mm
4.
6±0.
2 φ3.
2±0.
1 9.
9±0.
3 2.
9±0.
2
High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C)
Ratings –60 –80 –60 –80 –5 –5 –3 35 2 150 –55 to +150 Unit
Parameter Collector to base voltage Collector to 2SB1605 2SB1605A 2SB1605
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
4.
1±0.
2 8.
0±0.
2 Solder Dip
s Absolute Maximum Ratings
15.
0±0.
3
3.
0±0.
2
13.
7–0.
2
+0.
5
V
1.
2±0.
15 1.
45±0.
15 0.
...