Power
Transistors
2SB1623
Silicon
PNP epitaxial planer type
Unit: mm
For power amplification
9.
9±0.
3
4.
6±0.
2 2.
9±0.
2
• High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • Dielectric breakdown voltage of the package: 5 kV
13.
7±0.
2 4.
2±0.
2 Solder Dip
15.
0±0.
5
I Features
φ 3.
2±0.
1
I Absolute Maximum Ratings TC = 25°C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation TC = 25°C Ta = 25°C Tj Tstg Symbol VCBO VCEO VEBO ICP IC PC Rating −60 −60 −5 −8 −4 40 2.
0 150 −55 to +150 °C °C Unit V V V A A W
1.
4±0.
2 1.
6±0.
2 0.
8±0.
1
3.
0±0.
...