Power
Transistors
2SB1629
Silicon
PNP epitaxial planar type
For power amplification
Unit: mm
4.
6±0.
2
s Features
q q q
φ3.
2±0.
1
9.
9±0.
3
2.
9±0.
2
4.
1±0.
2 8.
0±0.
2 Solder Dip
High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C)
Ratings –60 –60 –6 –6 –3 –1 40 2 150 –55 to +150 Unit V V V A A A W ˚C ˚C
15.
0±0.
3
3.
0±0.
2
13.
7–0.
2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta...