DATA SHEET
SILICON
TRANSISTOR
2SB1658
AUDIO FREQUENCY AMPLIFIER, SWITCHING
PNP SILICON EPITAXIAL
TRANSISTORS
FEATURES
• Low VCE(sat) VCE(sat) = −0.
15 V Max (@lC/lB = 1.
0 A/50 mA)
3.
8 ± 0.
2 (0.
149)
PACKAGE DIMENSIONS in millimeters (inches) 8.
5 MAX.
2.
8 MAX.
(0.
334 MAX.
) (0.
110 MAX.
) φ 3.
2 ± 0.
2 ( φ 0.
126)
12.
0 MAX.
(0.
472 MAX.
)
• High DC Current Gain hEF = 150 to 600 (@VCE = −2.
0 V, lC = −1.
0 A)
ABSOLUTE MAXIMUM RATINGS
Maximum Voltage and Current (TA = 25 °C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse)* Base Current (DC) * PW ≤ 10ms, Duty Cycle ≤ 10 % Maximum Power Dissipation Total Power Dissipation (...