Part Number
|
TGF2023-02 |
Manufacturer
|
TriQuint Semiconductor |
Description
|
12 Watt Discrete Power GaN on SiC HEMT |
Published
|
Jul 1, 2012 |
Detailed Description
|
TGF2023-02
12 Watt Discrete Power GaN on SiC HEMT
Key Features
• • • • • • •
Frequency Range: DC - 18 GHz 41 dBm Nominal...
|
Datasheet
|
TGF2023-02
|
Overview
TGF2023-02
12 Watt Discrete Power GaN on SiC HEMT
Key Features
• • • • • • •
Frequency Range: DC - 18 GHz 41 dBm Nominal Psat at 3 GHz 58% Maximum PAE 18 dB Nominal Power Gain Bias: Vd = 28 - 32 V, Idq = 250 mA, Vg = -3.
6 V Typical Technology: 0.
25 um Power GaN on SiC Chip Dimensions: 0.
82 x 0.
92 x 0.
10 mm
Primary Applications
Bias conditions: Vd = 28 V, Idq = 250 mA, Vg = -3.
6 V Typical
• •
www.
DataSheet.
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Defense & Aerospace Broadband Wireless
Product Description
The TriQuint TGF2023-02 is a discrete 2.
5 mm GaN on SiC HEMT which operates from DC-18 GHz.
The TGF2023-02 is designed using TriQuint’s proven 0.
25um GaN production process.
This process features advanced field plate techni...
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