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TGF2023-2-10

Part Number	TGF2023-2-10
Manufacturer	TriQuint Semiconductor
Description	50 Watt Discrete Power GaN on SiC HEMT
Published	May 6, 2016
Detailed Description	Applications • Defense & Aerospace • Broadband Wireless TGF2023-2-10 50 Watt Discrete Power GaN on SiC HEMT Product Fe...
Datasheet	TGF2023-2-10 PDF File

Overview

Applications • Defense & Aerospace • Broadband Wireless TGF2023-2-10 50 Watt Discrete Power GaN on SiC HEMT Product Features • Frequency Range: DC - 18 GHz • 47.
3 dBm Nominal PSAT at 3 GHz • 69.
5% Maximum PAE • 19.
8 dB Nominal Power Gain at 3 GHz • Bias: VD = 12 - 32 V, IDQ = 200 - 1000 mA • Technology: TQGaN25 on SiC • Chip Dimensions: 0.
82 x 2.
48 x 0.
10 mm Functional Block Diagram General Description The TriQuint TGF2023-2-10 is a discrete 10 mm GaN on SiC HEMT which operates from DC-18 GHz.
The TGF2023-2-10 is designed using TriQuint’s proven TQGaN25 production process.
This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias ...

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