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TGF2023-2-02

Part Number	TGF2023-2-02
Manufacturer	TriQuint Semiconductor
Description	12 Watt Discrete Power GaN on SiC HEMT
Published	May 6, 2016
Detailed Description	Applications • Defense & Aerospace • Broadband Wireless TGF2023-2-02 12 Watt Discrete Power GaN on SiC HEMT Product Fe...
Datasheet	TGF2023-2-02 PDF File

Overview

Applications • Defense & Aerospace • Broadband Wireless TGF2023-2-02 12 Watt Discrete Power GaN on SiC HEMT Product Features • Frequency Range: DC - 18 GHz • 40.
1 dBm Nominal PSAT at 3 GHz • 73.
3% Maximum PAE • 21 dB Nominal Power Gain at 3 GHz • Bias: VD = 12 - 32 V, IDQ = 50 - 250 mA • Technology: TQGaN25 on SiC • Chip Dimensions: 0.
82 x 0.
92 x 0.
10 mm Functional Block Diagram General Description The TriQuint TGF2023-2-02 is a discrete 2.
5 mm GaN on SiC HEMT which operates from DC-18 GHz.
The TGF2023-2-02 is designed using TriQuint’s proven TQGaN25 production process.
This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions.
Pad Configuration Pad No.
1-2 3 Backside Symbol VG / RF IN VD / RF OUT Source / Ground The TGF2023-2-02 typically provides 40.
1 dBm of saturated output power with power gain of 21 dB at 3 GHz.
The maximum power added efficiency is 73.
3 % which makes the TGF2023-2-02 appropriat...

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