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TGF2023-2-01

Part Number	TGF2023-2-01
Manufacturer	TriQuint Semiconductor
Description	SiC HEMT
Published	May 6, 2016
Detailed Description	Applications • Defense & Aerospace • Broadband Wireless TGF2023-2-01 6 Watt Discrete Power GaN on SiC HEMT Product Fea...
Datasheet	TGF2023-2-01 PDF File

Overview

Applications • Defense & Aerospace • Broadband Wireless TGF2023-2-01 6 Watt Discrete Power GaN on SiC HEMT Product Features • Frequency Range: DC - 18 GHz • 38 dBm Nominal PSAT at 3 GHz • 71.
6% Maximum PAE • 18 dB Nominal Power Gain at 3 GHz • Bias: VD = 12 - 32 V, IDQ = 25 - 125 mA • Technology: TQGaN25 on SiC • Chip Dimensions: 0.
82 x 0.
66 x 0.
10 mm Functional Block Diagram General Description The TriQuint TGF2023-2-01 is a discrete 1.
25 mm GaN on SiC HEMT which operates from DC-18 GHz.
The TGF2023-2-01 is designed using TriQuint’s proven TQGaN25 production process.
This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias opera...

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