TGF2023-20 90 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz 49.
6 dBm Nominal Psat at 3 GHz 52% Maximum PAE 17.
5 dB Nominal Power Gain Bias: Vd = 28 - 32 V, Idq = 2 A, Vg = -3.
6 V Typical Technology: 0.
25 um Power GaN on SiC Chip Dimensions: 0.
82 x 4.
56 x 0.
10 mm Primary Applications • • www.
DataSheet.
net/ Defense & Aerospace Broadband Wireless Product Description Bias conditions: Vd = 28 V, Idq = 2 A, Vg = -3.
6 V Typical The TriQuint TGF2023-20 is a discrete 20 mm GaN on SiC HEMT which operates from DC-18 GHz.
The TGF2023-20 is designed using TriQuint’s proven 0.
25um GaN production process.
This process features advanced field plate technique...

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