2N5400

2N5400 : 2N5400 Preferred Device Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Symbol VCEO VCBO VEBO IC PD Value 120 130 5.0 600 625 5.0 Unit Vdc Vdc Vdc mAdc mW mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 W Derate above 25°C 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/.

2N5400 : Elektronische Bauelemente 2N5400 -0.6 A, -130 V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  Switching and amplification in high voltage  Applications such as telephony  Low current(max.600mA)  High voltage(max.130V) G H Collector   Base  Emitter J AD B K E CF TO-92  Emitter  Base  Collector REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 - 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 - 2.42 2.66 0.36 0.76 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Collector to Base Voltage Collector to Emitter Voltage Emitter .

2N5400 : Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg VALUE 120 130 5.0 600 625 5.0 1.5 12 - 55 to +150 THERMAL RESISTANCE Junction to Case Junction to Ambient in free air Rth (j-c) Rth (j-a) 83.3 200 ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Voltage *VCEO IC=1mA, IB=0 Collector Base Voltage VCBO IC=100µA, IE=0 Emitter Base Voltage VEBO IE=10µA, IC=-0 Collector Cut Off Current I.

2N5400 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5400/D Amplifier Transistors PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg 2N5400 2N5401 120 150 130 160 5.0 600 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W .

2N5400 : The CENTRAL SEMICONDUCTOR 2N5400 and 2N5401 are silicon PNP transistors designed for high voltage amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Power Dissipation PD Power Dissipation (TC=25°C) PD Operating and Storage Junction Temperature TJ, Tstg Thermal Resistance JA Thermal Resistance JC 2N5400 130 2N5401 160 120 150 5.0 600 625 1.5 -65 to +150 200 83.3 UNITS V V V mA mW W °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N5400 SYMBOL TEST CO.

2N5400 : PNP high-voltage transistor in a TO-92; SOT54 plastic package. NPN complements: 2N5550 and 2N5551. PINNING PIN 1 2 3 collector base emitter DESCRIPTION handbook, halfpage1 2 3 2 MAM280 1 3 Fig.1 Simplified outline (TO-92; SOT54) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE fT PARAMETER collector-base voltage 2N5400 2N5401 collector-emitter voltage 2N5400 2N5401 peak collector current total power dissipation DC current gain 2N5400 2N5401 transition frequency 2N5400 2N5401 CONDITIONS open emitter open base Tamb ≤ 25 °C IC = 10 mA; VCE = −5 V IC = −10 mA; VCE = −10 V; f = 100 MHz MIN. − − − − − − 40 60 100 100 MAX. UNIT −130 −160 V V −120 −150 −600 630 V V mA .

2N5400 : 2N5400 & 2N5401 Silicon PNP Transistor General Purpose Amplifier TO92 Type Package Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO 2N5400 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V 2N5401 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V Collector−Base Voltage, VCBO 2N5400 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130V 2N5401 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2N5401 : 2N5401 / MMBT5401 Discrete POWER & Signal Technologies 2N5401 MMBT5401 C E C BE TO-92 SOT-23 Mark: 2L B PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 150 160 5.0 200 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NO.

2N5401 : 2N5401 Amplifier Transistors PNP Silicon Features • These are Pb−Free Devices* MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VEBO IC PD 150 Vdc 160 Vdc 5.0 Vdc 600 mAdc 625 mW 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 W Derate above 25°C 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Stresses exceedin.

2N5401 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5400/D Amplifier Transistors PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg 2N5400 2N5401 120 150 130 160 5.0 600 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W .

2N5401 : A negative 3-terminal voltage regulator in a TO-92 type package suitable for numerous applications requiring up to 100mA. This device features thermal shutdown and current limiting making the device remarkably rugged. In most applications, no external components are required for operation. A useful for on-card regulation or any other application where a regulated negative voltage at a modest current level is needed. This device offers a substantial advantage over the common resistor/zener diode approach. Maximum Ratings: Characteristic Input Voltage Internal Power Dissipation (Note 1) Internally Operating Junction Temperature Range Max. Junction Temperature Storage Temperature Range Lead T.

2N5401 : SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V Low Leakage Current. : ICBO=-50nA(Max.) @VCB=-120V Low Saturation Voltage : VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA Low Noise : NF=8dB (Max.) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Ta=25 ) Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC PC Tj Tstg RATING -160 -150 -5 -600 -100 625 1.5 150 -55 150 UNIT V V V mA mA mW W L M C 2N5401 EPITAXIAL PLA.

2N5401 : PNP high-voltage transistor in a TO-92; SOT54 plastic package. NPN complements: 2N5550 and 2N5551. PINNING PIN 1 2 3 collector base emitter DESCRIPTION handbook, halfpage1 2 3 2 MAM280 1 3 Fig.1 Simplified outline (TO-92; SOT54) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE fT PARAMETER collector-base voltage 2N5400 2N5401 collector-emitter voltage 2N5400 2N5401 peak collector current total power dissipation DC current gain 2N5400 2N5401 transition frequency 2N5400 2N5401 CONDITIONS open emitter open base Tamb ≤ 25 °C IC = 10 mA; VCE = −5 V IC = −10 mA; VCE = −10 V; f = 100 MHz MIN. − − − − − − 40 60 100 100 MAX. UNIT −130 −160 V V −120 −150 −600 630 V V mA .

2N5401 : 2N5400 & 2N5401 Silicon PNP Transistor General Purpose Amplifier TO92 Type Package Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO 2N5400 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V 2N5401 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V Collector−Base Voltage, VCBO 2N5400 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130V 2N5401 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2N5401 : ·PNP high-voltage transistor ·Low current (max. 300 mA) ·High voltage (max. 160 V) ·Complements to 2N5551. isc Product Specification 2N5401 APPLICATIONS ·Designed for Switching and amplification in high voltage applications , such as telephony applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous 0.3 A ICM Collector Current-Peak 0.6 A IBM Base Current-Peak PC Collector Power Dissipation @ Ta50℃ 0.1 A 0.63 W J Junction Temperature Tstg Storage Temperature Range 150 ℃ -65~150 ℃ isc website：www.iscsemi.cn 1 is.

2N5401 : , at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R201-001.K .