SSM3J321T
TOSHIBA Field-Effect
Transistor Silicon P-Channel MOS Type (U-MOS V)
SSM3J321T
○ Power Management Switch Applications ○ High-Speed Switching Applications
• 1.
5V drive
• Low ON-resistance: Ron = 137mΩ (max) (@VGS = -1.
5 V) Ron = 88mΩ (max) (@VGS = -1.
8 V) Ron = 62mΩ (max) (@VGS = -2.
5 V) Ron = 46mΩ (max) (@VGS = -4.
5 V)
+0.
2 2.
8-0.
3
+0.
2 1.
6-0.
1
Unit: mm
0.
4±0.
1
2.
9±0.
2 1.
9±0.
2 0.
95 0.
95
0～0.
1 0.
15
0.
16±0.
05
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
１
２
３
Drain-Source voltage Gate-Source voltage
Drain current
DC Pulse
Drain power dissipation
Channel temperature Storage temperature range
VDSS
-20
V
VGSS
±8
V
ID (Note 1)
-5.
2
A
...