DatasheetsPDF.com

SSM3J328R Datasheet PDF


Part Number SSM3J328R
Manufacturer Toshiba Semiconductor
Title Silicon P-Channel MOSFET
Description MOSFETs Silicon P-Channel MOS (U-MOS�) SSM3J328R 1. Applications • Power Management Switches 2. Features (1) 1.5-V drive (2) Low drain-source on-r...
Features (1) 1.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 88.4 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 56.0 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 39.7 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 29.8 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Internal Circuit SOT-23F SSM3J328R 1: Gate 2: Source 3: Drain ©2021 ...

File Size 409.33KB
Datasheet SSM3J328R PDF File








Similar Ai Datasheet

SSM3J304T : SSM3J304T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J304T ○ Power Management Switch Applications ○ High-Speed Switching Applications • 1.8-V drive • Low ON-resistance: RDS(ON) = 297 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 168 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 127 mΩ (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 25˚C) Unit: mm Characteristic Symbol Rating Unit Drain-source voltage VDS -20 V Gate-source voltage VGSS ±8 V Drain current DC ID Pulse IDP -2.3 A -4.6 Power dissipation PD (Note 1) 700 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of .

SSM3J305T : SSM3J305T www.DataSheet4U.com TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J305T High-Speed Switching Applications • • 4 V drive Low ON-resistance: Ron = 477 mΩ (max) (@VGS = −4 V) Ron = 237 mΩ (max) (@VGS = −10 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain–source voltage Gate–source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating −30 ± 20 −1.7 −3.4 700 150 −55 to 150 Unit V V A mW °C °C Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this.

SSM3J306T : SSM3J306T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J306T Power management switch Applications • 4 V drive • Low ON-resistance: Ron = 225 mΩ (max) (@VGS = −4 V) Ron = 117 mΩ (max) (@VGS = −10 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain–source voltage VDS −30 V Gate–source voltage VGSS ± 20 V Drain current DC ID Pulse IDP −2.4 A −4.8 Drain power dissipation PD (Note 1) 700 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature,.

SSM3J307T : SSM3J307T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSV) SSM3J307T ○ Power Management Switch Applications ○ High-Speed Switching Applications • 1.5 V drive • Low ON-resistance: Ron = 83 mΩ (max) (@VGS = -1.5 V) Ron = 56 mΩ (max) (@VGS = -1.8 V) Ron = 40 mΩ (max) (@VGS = -2.5 V) Ron = 31 mΩ (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25°C) 2.9±0.2 1.9±0.2 0.95 0.95 +0.2 2.8-0.3 +0.2 1.6-0.1 Unit: mm 0.4±0.1 1 2 3 0~0.1 0.15 0.16±0.05 Characteristic Symbol Rating Unit 0.7±0.05 Drain-Source voltage VDSS -20 V Gate-Source voltage VGSS ±8 V Drain current DC ID (Note 1) -5.0 A Pulse IDP (Note 1) -10 Drain power dissipation PD (Note 2).

SSM3J317T : SSM3J317T www.DataSheet4U.com TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J317T ○ Power Management Switch Applications ○ High-Speed Switching Applications • • 1.8-V drive Low ON-resistance: Ron = 306 mΩ (max) (@VGS = -1.8 V) : Ron = 144 mΩ (max) (@VGS = -2.8 V) : Ron = 107 mΩ (max) (@VGS = -4.5 V) 2.9±0.2 0.95 1 2 3 Unit: mm +0.2 2.8-0.3 +0.2 1.6-0.1 0.4±0.1 0.15 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse ID Symbol VDSS VGSS (Note 1) IDP (Note 1) PD (Note 2) t = 5s Tch Tstg Rating -20 ±8 -3.6 -7.2 700 1400 150 −55 to 150 Unit V .

SSM3J321T : SSM3J321T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V) SSM3J321T ○ Power Management Switch Applications ○ High-Speed Switching Applications • 1.5V drive • Low ON-resistance: Ron = 137mΩ (max) (@VGS = -1.5 V) Ron = 88mΩ (max) (@VGS = -1.8 V) Ron = 62mΩ (max) (@VGS = -2.5 V) Ron = 46mΩ (max) (@VGS = -4.5 V) +0.2 2.8-0.3 +0.2 1.6-0.1 Unit: mm 0.4±0.1 2.9±0.2 1.9±0.2 0.95 0.95 0~0.1 0.15 0.16±0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit 1 2 3 Drain-Source voltage Gate-Source voltage Drain current DC Pulse Drain power dissipation Channel temperature Storage temperature range VDSS -20 V VGSS ±8 V ID (Note 1) -5.2 A .

SSM3J325F : SSM3J325F TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM3J325F ○ Power Management Switch Applications Unit: mm • 1.5-V drive • Low ON-resistance: RDS(ON) = 311 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 231 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 179 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 150 mΩ (max) (@VGS = -4.5 V) +0.5 2.5-0.3 +0.25 1.5-0.15 1 2 3 +0.1 0.4-0.05 2.9±0.2 1.9 0.95 0.95 Absolute Maximum Ratings (Ta = 25°C) 0.3 +0.1 0.16-0.06 +0.2 1.1-0.1 Characteristic Symbol Rating Unit Drain-source voltage VDSS -20 V Gate-source voltage VGSS ±8 V Drain current DC ID (Note 1) -2.0 A Pulse IDP (Note 1) -4.0 Power dissipation PD (Note 2) 600 mW t = .

SSM3J326T : SSM3J326T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM3J326T ○ Power Management Switch Applications • 1.8-V drive • Low ON-resistance: RDS(ON) = 115 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 62.5 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 45.7 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 39.3 mΩ (max) (@VGS = -10 V) +0.2 2.8-0.3 +0.2 1.6-0.1 Unit: mm 0.4±0.1 2.9±0.2 1.9±0.2 0.95 0.95 0~0.1 0.15 0.16±0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS -30 V VGSS ±12 V Drain current DC ID (Note 1) -5.6 A Pulse IDP (Note 1) -22.4 Power dissipation PD (Note 2) 700 mW t = 10 s 1250 Channel .

SSM3J327F : SSM3J327F TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM3J327F ○ Power Management Switch Applications Unit: mm • 1.5-V drive • Low ON-resistance: RDS(ON) = 242 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 170 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 125 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 95 mΩ (max) (@VGS = -4.5 V) +0.5 2.5-0.3 +0.25 1.5-0.15 1 2 3 +0.1 0.4-0.05 2.9±0.2 1.9 0.95 0.95 Absolute Maximum Ratings (Ta = 25°C) 0.3 +0.1 0.16-0.06 +0.2 1.1-0.1 Characteristic Symbol Rating Unit Drain-Source voltage VDSS -20 V 0~0.1 Gate-Source voltage VGSS ±8 V Drain current DC ID (Note 1) -3.5 A Pulse IDP (Note 1) -7.0 Power dissipation PD (Note 2) 600 mW.

SSM3J327R : MOSFETs Silicon P-Channel MOS (U-MOS�) SSM3J327R 1. Applications • Power Management Switches 2. Features (1) 1.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 240 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 168 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 123 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 93 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Internal Circuit SOT-23F SSM3J327R 1: Gate 2: Source 3: Drain ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2009-12 2021-10-21 Rev.1.0 SSM3J327R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS -20 V VGSS .

SSM3J331R : MOSFETs Silicon P-Channel MOS (U-MOS) SSM3J331R 1. Applications • Power Management Switches 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 150 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 100 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 75 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 55 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Pin Configuration SOT-23F SSM3J331R 1. Gate 2. Source 3. Drain ©2016 Toshiba Corporation 1 Start of commercial production 2011-07 2016-08-24 Rev.5.0 SSM3J331R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Drain-source voltage VDSS -20 V Gate-source voltage VGSS ±8 Drain curre.

SSM3J332R : SSM3J332R TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI) SSM3J332R ○Power Management Switch Applications • 1.8-V drive • Low ON-resistance: RDS(ON) = 144 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 72.0 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 50.0 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 42.0 mΩ (max) (@VGS = -10 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage VDSS -30 V Gate-Source voltage VGSS ± 12 V Drain current DC ID (Note 1) -6.0 A Pulse IDP (Note 1,2) -24.0 Power dissipation PD (Note 3) 1 W t 10s 2 Channel temperature Storage temperature range Tch 150 °C Tstg -55 to 150 °C SOT-23F 1: Gate.

SSM3J334R : SSM3J334R TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI) SSM3J334R ○Power Management Switch Applications Unit: mm • Low ON-resistance: RDS(ON) = 71 mΩ (max) (@VGS = -10 V) RDS(ON) = 105 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 136 mΩ (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage VDSS -30 V Gate-Source voltage VGSS ± 20 V Drain current DC ID (Note 1) -4 A Pulse IDP (Note 1,2) -16 Power dissipation PD (Note 3) 1 W t 10s 2 Channel temperature Storage temperature range Tch 150 °C Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high tem.

SSM3J338R : MOSFETs Silicon P-Channel MOS SSM3J338R 1. Applications • Power Management Switches 2. Features (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 26.3 mΩ (typ.) (@VGS = -1.8 V) RDS(ON) = 20.1 mΩ (typ.) (@VGS = -2.5 V) RDS(ON) = 15.9 mΩ (typ.) (@VGS = -4.5 V) 3. Packaging and Pin Assignment SOT-23F SSM3J338R 1: Gate 2: Source 3: Drain ©2015-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2015-08 2021-09-16 Rev.2.0 SSM3J338R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS -12 V VGSS ±10 Drain current (DC).

SSM3J340R : MOSFETs Silicon P-Channel MOS (U-MOS) SSM3J340R 1. Applications • Power Management Switches 2. Features (1) 4.0-V drive (2) Low drain-source on-resistance : RDS(ON) = 86 mΩ (max) (@VGS = -4.0 V) RDS(ON) = 73 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 45 mΩ (max) (@VGS = -10 V) 3. Packaging and Pin Assignment SOT-23F SSM3J340R 1: Gate 2: Source 3: Drain ©2016-2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2016-03 2019-05-17 Rev.3.0 SSM3J340R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage VDSS -30 V Gate-source voltage VGSS -25 / +20 Drain current (DC) (Note 1) .

SSM3J351R : MOSFETs Silicon P-Channel MOS (U-MOS�) SSM3J351R 1. Applications • Power Management Switches 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 4 V drive (3) Low drain-source on-resistance : RDS(ON) = 107 mΩ (typ.) (VGS = -10 V) RDS(ON) = 122 mΩ (typ.) (VGS = -4.5 V) RDS(ON) = 129 mΩ (typ.) (VGS = -4.0 V) 3. Packaging and Internal Circuit SSM3J351R 1: Gate 2: Source 3: Drain SOT-23F 4. Orderable part number Orderable part number AEC-Q101 Note SSM3J351R,LF SSM3J351R,LXGF SSM3J351R,LXHF � YES YES (Note 1) General Use Unintended Use Automotive Use Note 1: For more information, please contact our sales or use the inquiry form on our website. (Note 1) .




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)