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SSM3J328R

Toshiba Semiconductor
Part Number SSM3J328R
Manufacturer Toshiba Semiconductor
Description Silicon P-Channel MOSFET
Published Sep 16, 2012
Detailed Description MOSFETs Silicon P-Channel MOS (U-MOS�) SSM3J328R 1. Applications • Power Management Switches 2. Features (1) 1.5-V drive...
Datasheet PDF File SSM3J328R PDF File

SSM3J328R
SSM3J328R

Overview
MOSFETs Silicon P-Channel MOS (U-MOS�) SSM3J328R 1.
Applications • Power Management Switches 2.
Features (1) 1.
5-V drive (2) Low drain-source on-resistance : RDS(ON) = 88.
4 mΩ (max) (@VGS = -1.
5 V) RDS(ON) = 56.
0 mΩ (max) (@VGS = -1.
8 V) RDS(ON) = 39.
7 mΩ (max) (@VGS = -2.
5 V) RDS(ON) = 29.
8 mΩ (max) (@VGS = -4.
5 V) 3.
Packaging and Internal Circuit SOT-23F SSM3J328R 1: Gate 2: Source 3: Drain ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2010-08 2021-10-22 Rev.
1.
0 SSM3J328R 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS -20 V ...


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