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SSM3J325F

Toshiba Semiconductor
Part Number SSM3J325F
Manufacturer Toshiba Semiconductor
Description Silicon P-Channel MOSFET
Published Sep 16, 2012
Detailed Description SSM3J325F TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM3J325F ○ Power Management Switch Appli...
Datasheet PDF File SSM3J325F PDF File

SSM3J325F
SSM3J325F

Overview
SSM3J325F TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM3J325F ○ Power Management Switch Applications Unit: mm • 1.
5-V drive • Low ON-resistance: RDS(ON) = 311 mΩ (max) (@VGS = -1.
5 V) RDS(ON) = 231 mΩ (max) (@VGS = -1.
8 V) RDS(ON) = 179 mΩ (max) (@VGS = -2.
5 V) RDS(ON) = 150 mΩ (max) (@VGS = -4.
5 V) +0.
5 2.
5-0.
3 +0.
25 1.
5-0.
15 1 2 3 +0.
1 0.
4-0.
05 2.
9±0.
2 1.
9 0.
95 0.
95 Absolute Maximum Ratings (Ta = 25°C) 0.
3 +0.
1 0.
16-0.
06 +0.
2 1.
1-0.
1 Characteristic Symbol Rating Unit Drain-source voltage VDSS -20 V Gate-source voltage VGSS ±8 V Drain current DC ID (Note 1) -2.
0 A Pulse IDP (Note 1) -4.
0 Power dissipation PD (Note 2) 600 mW t = ...


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