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SSM3J326T

Toshiba
Part Number SSM3J326T
Manufacturer Toshiba
Description Silicon P-Channel MOSFET
Published Dec 14, 2023
Detailed Description SSM3J326T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM3J326T ○ Power Management Switch App...
Datasheet PDF File SSM3J326T PDF File

SSM3J326T
SSM3J326T

Overview
SSM3J326T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM3J326T ○ Power Management Switch Applications • 1.
8-V drive • Low ON-resistance: RDS(ON) = 115 mΩ (max) (@VGS = -1.
8 V) RDS(ON) = 62.
5 mΩ (max) (@VGS = -2.
5 V) RDS(ON) = 45.
7 mΩ (max) (@VGS = -4.
5 V) RDS(ON) = 39.
3 mΩ (max) (@VGS = -10 V) +0.
2 2.
8-0.
3 +0.
2 1.
6-0.
1 Unit: mm 0.
4±0.
1 2.
9±0.
2 1.
9±0.
2 0.
95 0.
95 0～0.
1 0.
15 0.
16±0.
05 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS -30 V VGSS ±12 V Drain current DC ID (Note 1) -5.
6 A Pulse IDP (Note 1) -22.
4 Power dissipation PD (Note 2) 700 mW t = 10 s 1250 Channel ...


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