SSM3J325F
TOSHIBA Field-Effect
Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
SSM3J325F
○ Power Management Switch Applications
Unit: mm
• 1.
5-V drive • Low ON-resistance: RDS(ON) = 311 mΩ (max) (@VGS = -1.
5 V)
RDS(ON) = 231 mΩ (max) (@VGS = -1.
8 V) RDS(ON) = 179 mΩ (max) (@VGS = -2.
5 V) RDS(ON) = 150 mΩ (max) (@VGS = -4.
5 V)
+0.
5 2.
5-0.
3
+0.
25 1.
5-0.
15
1
2
3
+0.
1 0.
4-0.
05
2.
9±0.
2 1.
9 0.
95 0.
95
Absolute Maximum Ratings (Ta = 25°C)
0.
3 +0.
1 0.
16-0.
06
+0.
2 1.
1-0.
1
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
-20
V
Gate-source voltage
VGSS
±8
V
Drain current
DC
ID (Note 1)
-2.
0
A
Pulse
IDP (Note 1)
-4.
0
Power dissipation
PD (Note 2)
600
mW
t = ...