Part Number
|
SSM3J328R |
Manufacturer
|
Toshiba Semiconductor |
Description
|
Silicon P-Channel MOSFET |
Published
|
Sep 16, 2012 |
Detailed Description
|
MOSFETs Silicon P-Channel MOS (U-MOS�)
SSM3J328R
1. Applications
• Power Management Switches
2. Features
(1) 1.5-V drive...
|
Datasheet
|
SSM3J328R
|
Overview
MOSFETs Silicon P-Channel MOS (U-MOS�)
SSM3J328R
1.
Applications
• Power Management Switches
2.
Features
(1) 1.
5-V drive (2) Low drain-source on-resistance
: RDS(ON) = 88.
4 mΩ (max) (@VGS = -1.
5 V) RDS(ON) = 56.
0 mΩ (max) (@VGS = -1.
8 V) RDS(ON) = 39.
7 mΩ (max) (@VGS = -2.
5 V) RDS(ON) = 29.
8 mΩ (max) (@VGS = -4.
5 V)
3.
Packaging and Internal Circuit
SOT-23F
SSM3J328R
1: Gate 2: Source 3: Drain
©2021
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
2010-08
2021-10-22 Rev.
1.
0
SSM3J328R
4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage
VDSS
-20
V
...
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