isc Silicon
NPN Power
Transistor
DESCRIPTION ·Excellent Safe Operating Area ·High DC Current Gain-hFE=15(Min)@IC = 8A ·Low Saturation Voltage-
: VCE(sat)= 1.
4V(Max)@ IC = 8A ·Complement to Type 2N6609 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
INCHANGE Semiconductor
2N3773
APPLICATIONS ·Designed for high power audio ,disk head positioners and
other linear applications, which can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters or inverters.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
160
V
VCEX
Collector-Emitter Voltage
160
V
...