Part Number
|
FDMC86244 |
Manufacturer
|
Fairchild Semiconductor |
Description
|
N-Channel Power Trench MOSFET |
Published
|
Sep 9, 2013 |
Detailed Description
|
FDMC86244 N-Channel Power Trench® MOSFET
February 2012
FDMC86244
N-Channel Power Trench® MOSFET
150 V, 9.4 A, 134 mΩ
F...
|
Datasheet
|
FDMC86244
|
Overview
FDMC86244 N-Channel Power Trench® MOSFET
February 2012
FDMC86244
N-Channel Power Trench® MOSFET
150 V, 9.
4 A, 134 mΩ
Features
Max rDS(on) = 134 mΩ at VGS = 10 V, ID = 2.
8 A Max rDS(on) = 186 mΩ at VGS = 6 V, ID = 2.
4 A Low Profile - 1 mm max in Power 33 100% UIL Tested RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Application
DC - DC Conversion
Top
Bottom
8
7
6
5
D D D D
D D D D 5 6 7 8 4 3 2 1 G S S S
1
2 3 4
G S S S
MLP 3.
3x3.
3
MOSFET Maximum Ratings TA = 25 °C...
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