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FDMC86244

Fairchild Semiconductor
Part Number FDMC86244
Manufacturer Fairchild Semiconductor
Description N-Channel Power Trench MOSFET
Published Sep 9, 2013
Detailed Description FDMC86244 N-Channel Power Trench® MOSFET February 2012 FDMC86244 N-Channel Power Trench® MOSFET 150 V, 9.4 A, 134 mΩ F...
Datasheet PDF File FDMC86244 PDF File

FDMC86244
FDMC86244

Overview
FDMC86244 N-Channel Power Trench® MOSFET February 2012 FDMC86244 N-Channel Power Trench® MOSFET 150 V, 9.
4 A, 134 mΩ Features „ Max rDS(on) = 134 mΩ at VGS = 10 V, ID = 2.
8 A „ Max rDS(on) = 186 mΩ at VGS = 6 V, ID = 2.
4 A „ Low Profile - 1 mm max in Power 33 „ 100% UIL Tested „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Application „ DC - DC Conversion Top Bottom 8 7 6 5 D D D D D D D D 5 6 7 8 4 3 2 1 G S S S 1 2 3 4 G S S S MLP 3.
3x3.
3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25°C TA = 25°C (Note 1a) (Note 3) TC = 25°C TA = 25°C (Note 1a) Rati...


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