FDMC86248 N-Channel Power Trench® MOSFET September 2012 FDMC86248 N-Channel Power Trench® MOSFET 150 V, 13 A, 90 mΩ Features „ Max rDS(on) = 90 mΩ at VGS = 10 V, ID = 3.
4 A „ Max rDS(on) = 125 mΩ at VGS = 6 V, ID = 2.
9 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ 100% UIL Tested „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Applications „ Primary MOSFET „ MV synchronous rectifier Top Bottom S Pin 1 S S S G S S D D D G D D D D D Power 33 MOSFE...

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