FDMC8030 Dual N-Channel Power Trench® MOSFET August 2011 FDMC8030 Dual N-Channel Power Trench® MOSFET 40 V, 12 A, 10 mΩ Features „ Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 12 A „ Max rDS(on) = 14 mΩ at VGS = 4.
5 V, ID = 10 A „ Max rDS(on) = 28 mΩ at VGS = 3.
2 V, ID = 4 A „ Termination is Lead-free and RoHS Compliant General Description This device includes two 40V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package.
The package is enhanced for exceptional thermal performance.
Applications „ Battery Protection „ Load Switching „ Point of Load Pin 1 G1 S1 S1 S1 G2 D1 D2 S2 S2 Bottom Drain2 Contact 8 7 6 5 Q2 1 G1 2 S1 3 S1 4 S1 Q1 G2 S2 S2 S2 Power 33 S2 Bottom Drain1 Co...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)