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FDMC8010

Fairchild Semiconductor
Part Number FDMC8010
Manufacturer Fairchild Semiconductor
Description N-Channel PowerTrench MOSFET
Published May 3, 2012
Detailed Description FDMC8010 N-Channel PowerTrench® MOSFET FDMC8010 N-Channel PowerTrench® MOSFET 30 V, 75 A, 1.3 mΩ Features General D...
Datasheet PDF File FDMC8010 PDF File

FDMC8010
FDMC8010

Overview
FDMC8010 N-Channel PowerTrench® MOSFET FDMC8010 N-Channel PowerTrench® MOSFET 30 V, 75 A, 1.
3 mΩ Features General Description April 2014 „ Max rDS(on) = 1.
3 mΩ at VGS = 10 V, ID = 30 A „ Max rDS(on) = 1.
8 mΩ at VGS = 4.
5 V, ID = 25 A „ High performance technology for extremely low rDS(on) „ Termination is Lead-free and RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.
This device is well suited for applications where ultra low rDS(on) is required in small spaces such as High performance VRM, POL and Oring functions.
Applications „ DC - DC Buck Converters „ Point of Load „ High Efficiency Load Switch and Low Side Switching „ Oring FET Pin 1 Pin 1 SS SG S S D D DDDD Top Bottom Power 33 SD GD MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Volage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25 °C TC = 25 °C TA = 25 °C Single Pulse Avalance Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 4) (Note 1a) (Note 3) (Note 1a) Ratings 30 ±20 75 166 30 120 153 54 2.
4 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1a) 2.
3 53 °C/W Device Marking FDMC8010 Device FDMC8010 Package Power 33 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2011 Fairchild Semiconductor Corporation FDMC8010 Rev.
C1 1 www.
fairchildsemi.
com FDMC8010 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown...


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