TECHNICAL DATA
NPN POWER SILICON
TRANSISTOR
Qualified per MIL-PRF-19500/518 Devices 2N3766 2N3767 Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = +250C (1) Operating & Storage Temperature Range
Symbol
VCEO VCBO VEBO IB IC PT Top, Tstg
2N3766
60 80 6.
0 2.
0 4.
0 25
2N3767
80 100
Units
Vdc Vdc Vdc Adc Adc W
0
-65 to +200 Max.
7.
0
C
THERMAL CHARACTERISTICS
Characteristics Symbol Thermal Resistance, Junction-to-Case RθJC 1) Derate linearly 143 mW/0C between TC = +250C and TC = +2000C Unit 0 C/W
TO-66* (TO-213AA)
*See Appendix A for Package Outline
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