SMD Type
Transistors
NPN Epitaxial Planar Silicon
Transistor 2SC5069
Features
High current capacity.
Adoption of MBIT process.
High DC current gain.
Low collector-to-emitter saturation voltage.
High VEBO.
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Base Current Collector dissipation Junction temperature Storage temperature * Mounted on ceramic board(250mm X0.
8mm).
2
Symbol VCBO VCEO VEBO IC ICP IB PC * Tj Tstg
Rating 30 25 15 2 4 0.
4 1.
5 150 -55 to +150
Unit V V V A A A W
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SMD Type
2SC5069
Electrical Characteri...