isc Silicon
NPN Darlingtion Power
Transistor
DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain-
hFE = 1000 (Min) @ IC =1 Adc ·Collector-Emitter Breakdown Voltage-
V(BR)CEO= 80V(Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
100
V
VCER Collector-Emitter Voltage
100
V
VCEO Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current -Continuous
6
A
IB
Base Current -Continuous
3
A
PC
Collector Power Dissi...