TOSHIBA
Transistor Silicon
NPN Epitaxial Type
TTC009
○ Power Amplifier Applications ○ Power Switching Applications
TTC009
Unit: mm
• Low collector-emitter saturation voltage: VCE (sat) = 0.
5 V (max)(IC = 1A) • High-speed switching: tstg = 0.
4 μs (typ.
)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
DC Pulse
Tc=25°C Ta=25°C
VCBO VCEX VCEO VEBO
IC ICP IB
PC
Tj Tstg
160
V
160
V
80
V
7
V
3
A
5
A
1
A
15 W
2
150
°C
−55 to 150
°C
JEDEC
-
JEITA
SC-67
TOSHIBA
2-10R1A
...