Part Number
|
GT30J122A |
Manufacturer
|
Toshiba |
Description
|
Silicon N-Channel IGBT |
Published
|
Jan 6, 2014 |
Detailed Description
|
Discrete IGBTs Silicon N-Channel IGBT
GT30J122A
1. Applications
• Dedicated to Current-Resonant Inverter Switching Appli...
|
Datasheet
|
GT30J122A
|
Overview
Discrete IGBTs Silicon N-Channel IGBT
GT30J122A
1.
Applications
• Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial-Switching Power Factor Correction (PFC) Applications
Note: The product(s) described herein should not be used for any other application.
2.
Features
(1) 4th generation (2) Enhancement mode (3) High-speed switching : tf = 0.
20 µs (typ.
) (IC = 50 A) (4) Low saturation voltage : VCE(sat) = 1.
7 V (typ.
) (IC = 50 A)
3.
Packaging and Internal Circuit
GT30J122A
TO-3P(N)
1 : Gate 2 : Collector 3 : Emitter
Start of commercial production
2010-06
1
2014-01-07
Rev.
2.
0
GT30J122A
4.
Absolute Maximum Ratings (Note) (Ta = 25, unless otherwise specif...
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