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GT30J121

Toshiba Semiconductor
Part Number GT30J121
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel IGBT
Published Mar 23, 2005
Detailed Description GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Fa...
Datasheet PDF File GT30J121 PDF File

GT30J121
GT30J121

Overview
GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth-generation IGBT • Enhancement mode type • Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.
05 μs (typ.
) Low switching loss : Eon = 1.
00 mJ (typ.
) : Eoff = 0.
80 mJ (typ.
) • Low saturation voltage: VCE (sat) = 2.
0 V (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range DC 1 ms VCES VGES IC ICP PC Tj Tstg 600 V ±20 V 30 A 60 170 W 150 °C −55 to 150 °C JEDEC ― JEITA ― TOSHIBA 2-16C1C Weight: 4.
6 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in th...


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