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GT30J126

Toshiba
Part Number GT30J126
Manufacturer Toshiba
Description Silicon N-Channel IGBT
Published Jan 6, 2014
Detailed Description GT30J126 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J126 High Power Switching Applications Fa...
Datasheet PDF File GT30J126 PDF File

GT30J126
GT30J126

Overview
GT30J126 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J126 High Power Switching Applications Fast Switching Applications • • • Fourth-generation IGBT Enhancement mode type Fast switching (FS): High speed: tf = 0.
05 μs (typ.
) Low switching loss : Eon = 1.
00 mJ (typ.
) : Eoff = 0.
80 mJ (typ.
) • Low saturation voltage: VCE (sat) = 1.
95 V (typ.
) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg Rating 600 ±20 30 60 90 150 −55 to 150 Unit V V A W °C °C JEDEC JEITA TOS...


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