DatasheetsPDF.com

GT30J122

Toshiba Semiconductor
Part Number GT30J122
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel IGBT
Published Sep 28, 2011
Detailed Description www.DataSheet.co.kr GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION ...
Datasheet PDF File GT30J122 PDF File

GT30J122
GT30J122

Overview
www.
DataSheet.
co.
kr GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS • • • Enhancement mode type High speed: tf = 0.
25μs (Typ.
) (IC = 50A) Low saturation voltage: VCE (sat) = 2.
1V (Typ.
) (IC = 50A) Unit: mm ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg Rating 600 ±20 30 100 75 150 −55~150 Unit V V A W °C °C JEDEC JEITA ― ― TOSHIBA 2-16F1A Note: Using continuously under heavy loads (e.
g.
...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)