isc Silicon
NPN Power
Transistor
DESCRIPTION ·High DC Current Gain-
: hFE= 25-100@IC= 7.
5A ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use as an output device in complementary
audio amplifiers to 100-Watts music power per channel.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
100
V
VCEO Collector-Emitter Voltage
90
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current-Continuous
30
A
IB
Base Current-Continuous
7.
5
A
PC
Collector Power Dissipation@TC=25℃
200
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
...