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MJ802

Part Number	MJ802
Manufacturer	ST Microelectronics
Description	COMPLEMENTARY HIGH POWER TRANSISTORS
Published	May 7, 2005
Detailed Description	® MJ802 SILICON NPN POWER TRANSISTOR s STMicroelectronics PREFERRED SALESTYPE DESCRIPTION The MJ802 is a silicon Epit...
Datasheet	MJ802 PDF File

Overview

® MJ802 SILICON NPN POWER TRANSISTOR s STMicroelectronics PREFERRED SALESTYPE DESCRIPTION The MJ802 is a silicon Epitaxial-Base power )transistor mounted in Jedec TO-3 metal case.
It t(sis intended for general purpose power amplifier Producand switching applications.
1 2 TO-3 - ObsoleteINTERNAL SCHEMATIC DIAGRAM Obsolete Product(s)ABSOLUTE MAXIMUM RATINGS Symbol Parameter VCEO Collector-emitter Voltage (IB = 0) VCBO Collector-base Voltage (IE = 0) VEBO Emitter-Base Voltage (IC = 0) IC Collector Current IB Base Current Ptot Total Dissipation at Tc ≤ 25 oC Tstg Storage Temperature Tj Max.
Operating Junction Temperature Value 90 100 4 30 7.
5 200 -65 to 200 200 Unit V V V A A W oC oC October 2003 1/4 MJ802 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 0.
875 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min.
Typ.
Max.
Unit ICBO Collector Cut-off Current (IE = 0) VCB = 100 V VCB = 10...

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