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Part Number
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2PG011 |
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Manufacturer
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Panasonic |
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Description
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Silicon N-Channel Enhancement IGBT |
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Published
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Apr 22, 2014 |
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Detailed Description
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This product complies with the RoHS Directive (EU 2002/95/EC).
IGBT
2PG011
Silicon N-channel enhancement IGBT
For plas...
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|
Datasheet
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2PG011
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Overview
This product complies with the RoHS Directive (EU 2002/95/EC).
IGBT
2PG011
Silicon N-channel enhancement IGBT
For plasma display panel drive For high speed switching circuits Features
Low collector-emitter saturation voltage: VCE(sat) 2.
5 V High-speed switching: tf = 185 ns (typ.
)
Package
Code TO-220D-A1 Pin Name 1.
Gate 2.
Collector 3.
Emitter
Collector-emitter voltage (E-B short) Gate-emitter voltage (E-B short) Collector current Peak collector current * Power dissipation
VCES IC
VGES ICP PC Tj
Ta = 25°C
Junction temperature Storage temperature
Tstg
Note) *: Assurance of repetitive pulse.
(Repetitive period ≤ 5 ms on-duty ≤ 20%) But, it must stay within 40% of all...
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