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2PG009

Panasonic
Part Number 2PG009
Manufacturer Panasonic
Description Silicon N-Channel IGBT
Published Feb 20, 2014
Detailed Description This product complies with the RoHS Directive (EU 2002/95/EC). IGBT 2PG009 Silicon N-channel enhancement IGBT For plas...
Datasheet PDF File 2PG009 PDF File

2PG009
2PG009

Overview
This product complies with the RoHS Directive (EU 2002/95/EC).
IGBT 2PG009 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits  Features  Low collector-emitter saturation voltage: VCE(sat) < 2.
5 V  High-speed switching: tf = 185 ns (typ.
)  Package  Code TO-220D-A1  Marking Symbol: 2PG009  Pin Name 1.
Gate 2.
Collector 3.
Emitter Collector-emitter voltage (E-B short) Gate-emitter voltage (E-B short) Collector current Peak collector current * Power dissipation VCES IC VGES ICP PC Tj Ta = 25°C Junction temperature Storage temperature Tstg Note) *: Assurance of repetitive pulse.
(Repetitive period ≤ 5 ms on-duty ≤ 20%) But, it must stay within 40% of all that the time impressed pulse repetitively.
T ≤ 5.
0 µs, On-duty ≤ 20%  Electrical Characteristics TC = 25°C±3°C Parameter Collector-emitter voltage (E-B short) Gate-emitter cutoff current (E-B short) Gate-emitter threshold voltage Symbol VCES ICES IGES on tin Collector-emitter cutoff current (E-B short) * VGE(th) –VCE Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf Short-circuit input capacitance (Common emitter) Short-circuit output capacitance (Common emitter) Reverse transfer capacitance (Common emitter) Gate charge load Gate-emitter charge Gate-collector charge Turn-on delay time Rise time Turn-off delay time Fall time Thermal resistance (ch-c) Thermal resistance (ch-a) te na Collector-emitter reverse break down voltage nc e Collector-emitter saturation voltage VCE(sat) Pl Rth(ch-c) Rth(j-a) Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
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