DatasheetsPDF.com

2PG006

Panasonic
Part Number 2PG006
Manufacturer Panasonic
Description Silicon N-channel enhancement IGBT
Published Mar 27, 2016
Detailed Description IGBT This product complies with the RoHS Directive (EU 2002/95/EC). PlehtatMspae:i//nvitwseitwnfaw.onlslceoe/wmiiDipnc...
Datasheet PDF File 2PG006 PDF File

2PG006
2PG006

Overview
IGBT This product complies with the RoHS Directive (EU 2002/95/EC).
PlehtatMspae:i//nvitwseitwnfaw.
onlslceoe/wmiiDipnclsgdoaicnsn.
oUcepnRtodaiLpnnlntdimiaauansasneibcuoednooteniduinetdntcilnt.
cmlnayactauiupnoe.
dnecejstetdepe/sittnefnyyfanopp/lonleercodemwitatnyigpo fen.
ourDisMcaionnttieProductnnualifecycleenstage.
dce/ 2PG006 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits  Features  Low collector-emitter saturation voltage: VCE(sat) < 2.
4 V  High-speed switching: tf = 175 ns (typ.
)  Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-emitter voltage (E-B short) VCES 430 V Gate-emitter voltage (E-B short) VGES –30 to +35 V Collector current IC 40 A Peak collector current * ICP 230 A Power dissipation 40 W Ta = 25°C PC 2.
0 W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note) *: Assurance of repetitive pulse.
(Repetitive period ≤ 5 ms on-duty ≤ 20%) But, it must stay within 40% of all that the time impressed pulse repetitively.
 Package  Code TO-220D-A1  Marking Symbol: 2PG006  Pin Name 1.
Gate 2.
Collector 3.
Emitter  Internal Connection C G E T ≤ 5.
0 00µs, On-duty ≤ 20%  Electrical Characteristics TC = 25°C±3°C Parameter Symbol Conditions Min Typ Collector-emitter voltage (E-B short) Collector-emitter cutoff current (E-B short) * Gate-emitter cutoff current (E-B short) VCES ICES IGES IC = 1 mA, VGE = 0 VCE = 344 V, VGE = 0 VGE = ±35 V, –30 V, VCE = 0 430 Gate-emitter threshold voltage VGE(th) VCE = 10 V, IC = 1.
0 mA 3.
0 Collector-emitter saturation voltage Collector-emitter reverse break down voltage Short-circuit input capacitance (Common emitter) Short-circuit output capacitance (Common emitter) Reverse transfer capacitance (Common emitter) VCE(sat) –VCE Cies Coes Cres VGE = 15 V, IC = 40 A IC = –100 mA, VGE = 15 V VCE = 25 V, VGE = 0, f = 1 MHz 1.
75 18 22.
5 1 200 130 20 Gate charge load Qg 54 Gate-emitt...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)