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2PG002

Panasonic
Part Number 2PG002
Manufacturer Panasonic
Description N-Channel IGBT
Published Mar 25, 2014
Detailed Description This product complies with the RoHS Directive (EU 2002/95/EC). IGBT 2PG002 N-channel enhancement mode IGBT For plasma ...
Datasheet PDF File 2PG002 PDF File

2PG002
2PG002

Overview
This product complies with the RoHS Directive (EU 2002/95/EC).
IGBT 2PG002 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits  Features  Low collector-emitter saturation voltage: VCE(sat) < 2.
4 V  High speed hall time: tf = 190 nsec(typ.
)  Package  Code TO-220F-A1  Marking Symbol: 2PG002  Pin Name 1.
Gate 2.
Collector 3.
Emitter Parameter Symbol VCES IC VGES ICP PC Tj Collector-emitter voltage (E-B short) Gate-emitter voltage (E-B short) Collector current Peak collector current * Power dissipation Ta = 25°C Junction temperature Storage temperature Tstg Note) *: PW ≤ 10 us, Duty ≤ 1.
0%  Electrical Characteristics TC = 25°C±3°C Parameter Collector-emitter voltage (E-B short) Symbol VCES ICES IGES Gate-emitter cutoff current (E-B short) Gate-emitter threshold voltage Collector-emitter saturation voltage on tin ue Collector-emitter cutoff current (E-B short) /D isc VGE(th) Cies VCE(sat) Coes Cres Qg Qge Qgc tr td(off) tf Gate charge load M ain Reverse transfer capacitance (Common emitter) Gate-emitter charge Turn-on delay time Rise time Turn-off delay time Fall time te na Short-circuit output capacitance (Common emitter) nc e Short-circuit input capacitance (Common emitter) Gate-collector charge Pl td(on) VCC = 200 V, IC = 40 A, RL ≈ 5 Ω, VGE = 15 V Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
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Rating 410 40 40 ±30 160 2.
0 Unit V V A A M Di ain sc te on na tin nc ue e/ d  Absolute Maximum Ratings TC = 25°C W G  Internal Connection C W 150 °C °C E –55 to +150 Conditions Min 410 Typ Max 50 Unit V mA mA V V IC...


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