DISCRETE SEMICONDUCTORS
DATA SHEET
BLV75/12 VHF power
transistor
Product specification August 1986
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Philips Semiconductors
Product specification
VHF power
transistor
DESCRIPTION N-P-N silicon planar epitaxial
transistor primarily intended for use in mobile radio transmitters in the 175 MHz commmunications band.
FEATURES • multi-base structure and emitter-ballasting resistors for an optimum temperature profile • gold metallization ensures excellent reliability • internal matching to achieve an optimum wideband capability and high power gain The
transistor has a 6-lead flange envelope with a ceramic cap (SOT-119).
All leads are isolated from the flange.
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