Power
Transistors
2SD2209
Silicon
NPN triple diffusion planar type Darlington
7.
0±0.
3 3.
5±0.
2
Unit: mm
For power amplification and switching
7.
2±0.
3 0.
8±0.
2
3.
0±0.
2
1.
0±0.
2
M Di ain sc te on na tin nc ue e/ d
q
I type package enabling direct soldering of the radiating fin to the printed circuit board, etc.
of small electronic equipment.
10.
0 –0.
+0.
3
s Features
1.
1±0.
1 0.
75±0.
1
0.
85±0.
1 0.
4±0.
1
2.
3±0.
2
4.
6±0.
4 2
s
Absolute Maximum Ratings (TC=25˚C)
Parameter Symbol VCBO VCEO VEBO ICP IC 100±15 100±15 5 8 4
1
3
Ratings
Unit V V V A A
1:Base 2:Collector 3:Emitter I Type Package Unit: mm
0 to 0.
15
Collector to emitter voltage Emitter to base voltage Peak collector current ...