Semiconductor
IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM
25A and 28A, 80V and 100V, 0.
077 and 0.
100 Ohm, N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate power field eff ect tr ansistors.
The y are adv anced po wer MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdo wn avalanche mode of operation.
All of these po wer MOSFETs are designed f or applications such as s witching
regulators, switching convertors, motor dr ivers, relay drivers, and dr ivers for high po wer bipolar s witching tr ansistors requir ing high speed and lo w gate drive power.
These types can be operated directly from integrated circui...