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IRF510A

Fairchild Semiconductor
Part Number IRF510A
Manufacturer Fairchild Semiconductor
Description Advanced Power MOSFET
Published Apr 16, 2005
Detailed Description Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n ...
Datasheet PDF File IRF510A PDF File

IRF510A
IRF510A

Overview
Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175°C Operating Temperature n Lower Leakage Current : 10 μA (Max.
) @ VDS = 100V n Lower RDS(ON) : 0.
289 Ω (Typ.
) IRF510A BVDSS = 100 V RDS(on) = 0.
4 Ω ID = 5.
6 A TO-220 1 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25℃) Continuous Drain Current (TC=100℃) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp.
for Soldering Purposes, 1/8? from case for 5-seconds (2) (1) (1) (1) Value 100 5.
6 4 20 ±20 63 5.
6 3.
3 6.
5 33 0.
22 - 55 to +175 Units V A A V mJ A mJ V/ns W W...


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