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IRF510

Fairchild Semiconductor
Part Number IRF510
Manufacturer Fairchild Semiconductor
Description N-Channel Power MOSFET
Published Apr 16, 2005
Detailed Description Data Sheet January 2002 IRF510 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon ...
Datasheet PDF File IRF510 PDF File

IRF510
IRF510

Overview
Data Sheet January 2002 IRF510 5.
6A, 100V, 0.
540 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.
Formerly developmental type TA17441.
Ordering Information PART NUMBER PACKAGE BRAND IRF510 TO-220AB IRF510 NOTE: When ordering, include the entire part number.
Features • 5.
6A, 100V • rDS(ON) = 0.
540Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature -...


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