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IRF510

Inchange Semiconductor
Part Number IRF510
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET Transistor
Published Aug 2, 2016
Detailed Description INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF510 ·FEATURES ·Low RDS(on) ·VGS Ra...
Datasheet PDF File IRF510 PDF File

IRF510
IRF510

Overview
INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF510 ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·DESCRITION ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 100 ±20 V V ID Drain Current-Continuous 5.
6 A IDM Drain Current-Single Plused 20 A PD Total Dissipation @TC=25℃ 43 W Tj Max.
Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.
5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 80 ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.
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cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF510 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VSD Forward On-Voltage Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance CONDITIONS VGS= 0; ID= 0.
25mA VDS= VGS; ID= 0.
25mA VGS= 10V; ID= 3.
4A VGS= ±20V;VDS= 0 VDS= 100V; VGS=0 IS= 5.
6A; VGS=0 VDS=25V,VGS=0V, F=1.
0MHz MIN TYP MAX UNIT 100 V 2 4V 0.
54 Ω ±500 nA 250 uA 2.
5 V 135 pF 80 pF 20 pF ·SWITCHING CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS Td(on) Turn-on Delay Time Tr Rise Time Td(off) Turn-off Delay Time VDD=50V,ID=5.
6A VGS=10V,RGEN=24Ω RGS=24Ω Tf Fall Time MIN TYP MAX UNIT 8 11 ns 25 36 ns 15 21 ns 12 21 ns isc website：www.
iscsemi.
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