2SD2636
TOSHIBA
Transistor Silicon
NPN Triple Diffused Type (Darlington power
transistor)
2SD2636
Power Amplifier Applications High-Power Switching Applications
• • High-breakdown voltage: VCEO = 160 V (min) Complementary to 2SB1682 Unit: mm
Absolute Maximum Ratings (Tc = 25°C)
Characteristic S Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse I ymbol VCBO VCEO VEBO IC
CP 15
Rating 160 160 5 8
Unit V V V A 1.
Base A W °C °C 2.
Collector(heatsink) 3.
Emitter
IB PC Tj Tstg
1 100 150 −55 to 150
JEDEC
―
JEITA ― Note: Using continuously under heavy loads (e.
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