Part Number
|
2SK3995 |
Manufacturer
|
Panasonic |
Description
|
Silicon N-Channel MOSFET |
Published
|
Jul 16, 2014 |
Detailed Description
|
This product complies with the RoHS Directive (EU 2002/95/EC).
Power er MOSFETs
2SK3995
Silicon N-channel enhancement ...
|
Datasheet
|
2SK3995
|
Overview
This product complies with the RoHS Directive (EU 2002/95/EC).
Power er MOSFETs
2SK3995
Silicon N-channel enhancement MOSFET
For high speed switching circuits For PDP Features
Medium breakdown voltag: VDSS = 200 V, ID = 30 A Low ON resistance, optimum for PDP panel drive
Package
Code TO-220C-G1 Marking Symbol: K3995 Pin Name 1.
Gate 2.
Drain 3.
Source
Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current *1
VDSS VGSS ID IDP
Drain reverse current
IDR
Peak drain reverse current *1
IDRP
Avalanche energy capability *2 Drain power dissipation Junction temperature Storage temperature
EAS PD Tj
TC = 25°C
Ta = 25°C *3
Tstg
Ele...
Similar Datasheet