GT8G136
TOSHIBA Insulated Gate Bipolar
Transistor Silicon N Channel IGBT
GT8G136
Strobe Flash Applications
• • • Compact and Thin (TSSOP-8) package Enhancement-mode Peak collector current: IC = 150 A (max) (@VGE=3.
0V(min),Ta=70℃(max))/ Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage Gate-emitter voltage DC Pulse Pulse (Note 1) (Note 2a) (Note 2b) Symbol VCES VGES VGES ICP PC (1) PC (2) Tj Tstg Rating 400 ±6 ±8 150 1.
1 0.
6 150 −55~150 Unit V V
Collector current Collector power dissipation(t=10 s) Junction temperature Storage temperature range
A W W °C °C
1,2 3 4 EMITTER EMITTER (Gate drive connection) GATE
Note: Using continuously under heavy loads...