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GT8G151

Part Number	GT8G151
Manufacturer	Toshiba
Description	Silicon N-Channel IGBT
Published	Jan 30, 2024
Detailed Description	TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G151 GT8G151 Strobe Flash Applications • Enhancem...
Datasheet	GT8G151 PDF File

Overview

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G151 GT8G151 Strobe Flash Applications • Enhancement-mode • Low gate drive voltage: VGE = 2.
5 V (min.
) (@IC = 150 A) • Peak collector current: IC = 150 A (max) • Compact and Thin (TSON-8) package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 400 V DC VGES ±4 Gate-emitter voltage V Pulse VGES ±5 Collector current Pulse (Note 1) ICP 150 A Collector power (Note 2a) PC (1) 0.
83 W dissipation(t = 10 s) (Note 2b) PC (2) 0.
69 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under ...

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