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GT8G136

Part Number	GT8G136
Manufacturer	Toshiba Semiconductor
Description	Silicon N-Channel IGBT
Published	Sep 3, 2014
Detailed Description	GT8G136 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G136 Strobe Flash Applications • • • Compac...
Datasheet	GT8G136 PDF File

Overview

GT8G136 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G136 Strobe Flash Applications • • • Compact and Thin (TSSOP-8) package Enhancement-mode Peak collector current: IC = 150 A (max) (@VGE=3.
0V(min),Ta=70℃(max))/ Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage DC Pulse Pulse (Note 1) (Note 2a) (Note 2b) Symbol VCES VGES VGES ICP PC (1) PC (2) Tj Tstg Rating 400 ±6 ±8 150 1.
1 0.
6 150 −55~150 Unit V V Collector current Collector power dissipation（t＝10 s） Junction temperature Storage temperature range A W W °C °C 1,2 3 4 EMITTER EMITTER (Gate drive connection) GATE Note: Using continuously under heavy loads...

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